V. P. Popov, V. A. Antonov, V. E. Zhilitskii, A. A. Lomov, A. V. Myakonkikh, K. V. Rudenko, “Thermally stable ferroelectric HfO$_2$ : Al$_2$O$_3$ (10:1) in silicon-on-insulator and silicon-on-sapphire heterostructures after rapid thermal annealing treatments and oxidation-induced silicon thinning”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2025, Volume 121, Issue 12,Pages 945

This article is cited in 2 papers

CONDENSED MATTER

Thermally stable ferroelectric HfO$_2$ : Al$_2$O$_3$ (10:1) in silicon-on-insulator and silicon-on-sapphire heterostructures after rapid thermal annealing treatments and oxidation-induced silicon thinning

V. P. Popov^a, V. A. Antonov^a, V. E. Zhilitskii^a, A. A. Lomov^b, A. V. Myakonkikh^b, K. V. Rudenko^b

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
^b Valiev Institute of Physics and Technology, National Research Center Kurchatov Institute, Russian Academy of Sciences, 117218, Moscow, Russia

Abstract: Grazing incidence X-ray diffraction (GIXRD) data have indicated that the orthorhombic $Pmn{{2}_{1}}$ phase previously detected in a $10$–$20$ nm buried ferroelectric HfO$_2$ : Al$_2$O$_3$ (10:1) layer of silicon-on-insulator and silicon-on-sapphire structures after annealing at $T > 950^\circ$ C for $1$ h is absent after $30$ s stepwise rapid thermal annealing treatments. Instead, stressed textured ferroelectric layers thermally stable up to $1000^\circ$ C are formed with the $\{111\}$ and $\{002\}$ orientations for silicon and sapphire substrates, respectively, in the rhombohedral $rR3$ or orthorhombic $Pca{{2}_{1}}$ phases, which are not manifested in GIXRD patterns. The high remnant polarization in silicon-on-insulator structures indicates that the rhombohedral $rR3$ phase is favorable.

Received: 07.04.2025
Revised: 02.05.2025
Accepted: 03.05.2025

DOI: 10.31857/S0370274X25060144