Abstract:
Hexagonal boron nitride is distinguished among solid-state materials with luminescent properties as a material to create single-photon sources efficiently emitting at room temperature. In this work, it is demonstrated that helium ion irradiation with fluences of $1\cdot10^{14}{-}5\times 10^{14}$ ion/cm$^2$ increases the ultraviolet radiation intensity with a maximum at a wavelength of $320$ nm due to the formation of new luminescent centers. The subsequent electron irradiation further increases the intensity of $320$ nm luminescence apparently due to the formation of carbon-containing defects in the volume of $h$BN through recombination-enhanced migration. On the contrary, the intense helium ion irradiation stimulates the formation of nonradiative recombination centers, which reduce the lifetime of nonequilibrium charge carriers.
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