Abstract:
An analytical model has been developed to describe the electron transport in semiconductor photocathodes exposed to microwave radiation from radiofrequency photoguns. The considered model, whose applicability framework is presented, makes it possible to obtain an analytical expression for the photocurrent profile, which potentially allows a more accurate simulation of the operation regime of radiofrequency photoguns for generating ultrashort (pico- and subpicosecond) electron bunches. The dependence of photocurrent fronts on the model parameters has been considered and discussed. The main directions for the development of the model have been outlined.
Fulltext:
PDF file (439 kB)
First page:
PDF file