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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2024 Volume 120, Issue 4, Pages 304–311 (Mi jetpl7308)

This article is cited in 1 paper

QUANTUM INFORMATION SCIENCE

Effect of etching methods on dielectric losses in transmons

T. A. Chudakovaabc, G. S. Mazhorinbac, I. V. Trofimovd, N. Yu. Rudenkob, A. M. Mymlyakovd, A. S. Kazminacab, E. Yu. Egorovaacb, P. A. Gladilovichb, M. V. Chichkovb, N. A. Maleevab, M. A. Tarkhovd, V. I. Chichkovb

a Russian Quantum Center, Skolkovo, Moscow, 121205 Russia
b National University of Science and Technology MISIS, Moscow, 119049 Russia
c Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow region, 141701 Russia
d Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, 119991 Russia

Abstract: Superconducting qubits are considered as a promising platform for implementing a fault tolerant quantum computing. However, surface defects of superconductors and the substrate leading to qubit state decoherence and fluctuations in qubit parameters constitute a significant problem. The amount and type of defects depend both on the chip materials and fabrication procedure. In this work, transmons produced by two different methods of aluminum etching: wet etching in a solution of weak acids and dry etching using a chlorine-based plasma are experimentally studied. The relaxation and coherence times for dry-etched qubits are more than twice as long as those for wet-etched ones. Additionally, the analysis of time fluctuations of qubit frequencies and relaxation times, which is an effective method to identify the dominant dielectric loss mechanisms, i-ndicates a significantly lower impact of two-level systems in the dry-etched qubits compared to the wet-etched ones.

Received: 03.07.2024
Revised: 20.07.2024
Accepted: 22.07.2024

DOI: 10.31857/S0370274X24080244


 English version:
Journal of Experimental and Theoretical Physics Letters, 2024, 120:4, 298–305


© Steklov Math. Inst. of RAS, 2026