I. G. Gorlova, S. G. Zybtsev, V. Ya. Pokrovskii, S. A. Nikonov, S. V. Zaitsev-Zotov, A. N. Titov, “Logarithmic relaxation of the photoconductivity of a quasi-one-dimensional TiS<nobr>$_3$</nobr> semiconductor”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2024, Volume 120, Issue 2,Pages <nobr>138

CONDENSED MATTER

Logarithmic relaxation of the photoconductivity of a quasi-one-dimensional TiS$_3$ semiconductor

I. G. Gorlova^a, S. G. Zybtsev^a, V. Ya. Pokrovskii^a, S. A. Nikonov^a, S. V. Zaitsev-Zotov^ab, A. N. Titov^c

^a Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009, Moscow, Russia
^b Faculty of Physics, HSE University, 105066, Moscow, Russia
^c Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 620108, Yekaterinburg, Russia

Abstract: Transient processes in the photoconductivity of TiS$_3$ single crystals exposed to rectangular light pulses in the wavelength range of $\lambda= 405{-}940\,$nm are investigated. It is established that the decay in the photoconductivity after switching the light off at temperatures from $78$ to $180$ K is described by a logarithmic law in the range from $10^{-3}$ to $10^2$ s (i.e., when time changes by five orders of magnitude). This means that the relaxation process is characterized by times ranging, at least, from several tens of microseconds to several tens of minutes. It is shown that the relaxation is basically successive: the recombination barrier increases while the conductivity approaches the equilibrium value.

Received: 09.05.2024
Revised: 14.06.2024
Accepted: 28.06.2024

DOI: 10.31857/S123456782414009X