Abstract:
Measurements of magnetotransport in high quality InN nanowires in presence of conductive atomic-force microscope tip performed at a temperature of $T = 4.2$ K are presented. We demonstrate evidence of influence of the close to nanowire placed AFM tip at certain ranges of the back gate voltages and the decreasing of the influence in external magnetic field of $B \geqslant 150$ mT. We explain such a behavior by presence of the branched current under the surface of the InN nanowire similar to ones of two-dimensional electrons in heterostructures and graphene samples with point contacts.
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