A. O. Larin, E. I. Ageev, L. N. Dvoretskaia, A. M. Mozharov, I. S. Mukhin, D. A. Zuev, “Formation of luminescent structures in thin a-Si:H–Er films irradiated by femtosecond laser pulses”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2021, Volume 114, Issue 11,Pages <nobr>749

This article is cited in 3 papers

OPTICS AND NUCLEAR PHYSICS

Formation of luminescent structures in thin a-Si:H–Er films irradiated by femtosecond laser pulses

A. O. Larin^a, E. I. Ageev^a, L. N. Dvoretskaia^b, A. M. Mozharov^b, I. S. Mukhin^ba, D. A. Zuev^a

^a ITMO University, St. Petersburg, 197101 Russia
^b Alferov University, Russian Academy of Sciences, St. Petersburg, 194021 Russia

Abstract: The process of intcorporation of erbium into silicon in a multilayer film consisting of Er and a-Si:H layers irradiated by femtosecond laser pulses is studied. The effect of the energy density of laser radiation on the phase composition and on the photoluminescence signal intensity from exposed regions is analyzed. The methods of thermal and femtosecond laser doping of films are compared. The results can be useful for the development of promising optoelectronic devices based on Si:Er structures.

Received: 23.09.2021
Revised: 02.11.2021
Accepted: 03.11.2021

DOI: 10.31857/S1234567821230051