A. S. Kazakov, A. V. Galeeva, A. V. Ikonnikov, D. E. Dolzhenko, L. I. Ryabova, N. N. Mikhailov, S. A. Dvoretskiy, M. I. Bannikov, S. N. Danilov, D. R. Khokhlov, “Roles of elements of a heterostructure based on the topological phase of Hg$_{1-x}$Cd$_{x}$Te in the effect of $PT$-symmetric terahertz photoconductivity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2021, Volume 113, Issue 8,Pages 548

This article is cited in 2 papers

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Roles of elements of a heterostructure based on the topological phase of Hg$_{1-x}$Cd$_{x}$Te in the effect of $PT$-symmetric terahertz photoconductivity

A. S. Kazakov^a, A. V. Galeeva^a, A. V. Ikonnikov^a, D. E. Dolzhenko^a, L. I. Ryabova^b, N. N. Mikhailov^c, S. A. Dvoretskiy^c, M. I. Bannikov^d, S. N. Danilov^e, D. R. Khokhlov^ad

^a Faculty of Physics, Moscow State University, Moscow, 119991 Russia
^b Faculty of Chemistry, Moscow State University, Moscow, 119991 Russia
^c Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
^d Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991 Russia
^e Faculty of Physics, University of Regensburg, 93053 Regensburg, Germany

Abstract: It is demonstrated that the $PT$-symmetric terahertz photoconductivity observed in heterostructures based on thick Hg$_{1-x}$Cd$_{x}$Te films in the topological phase is due to the photoexcitation of charge carriers in the film bulk. At the same time, the place of localization of the effect is the topological film–trivial buffer layer heterointerface. The model describing such a spatial separation of the source of nonequilibrium charge carriers and the effect localization is discussed.

Received: 12.03.2021
Revised: 23.03.2021
Accepted: 23.03.2021

DOI: 10.31857/S1234567821080103