A. I. Yakimov, A. A. Bloshkin, V. V. Kirienko, A. V. Dvurechenskii, D. E. Utkin, “Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2021, Volume 113, Issue 8,Pages <nobr>501

This article is cited in 4 papers

OPTICS AND NUCLEAR PHYSICS

Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal

A. I. Yakimov^ab, A. A. Bloshkin^bc, V. V. Kirienko^b, A. V. Dvurechenskii^bc, D. E. Utkin^cb

^a Tomsk State University, Tomsk, 634050 Russia
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
^c Novosibirsk State University, Novosibirsk, 630090 Russia

Abstract: It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. The photonic crystal is a regular triangular array of holes in a Si/Ge/Si heterostructure grown on a silicon-on-insulator substrate. The results have been explained by the excitation of planar modes of the photonic crystal, which propagate along the Ge/Si layers and effectively interact with interband transitions in quantum dots, by the incident light wave.

Received: 15.03.2021
Revised: 15.03.2021
Accepted: 17.03.2021