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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2021 Volume 113, Issue 7, Pages 463–467 (Mi jetpl6399)

This article is cited in 3 papers

CONDENSED MATTER

Two-dimensional semimetal HgTe in 14-nm-thick quantum wells

N. N. Vasil'evab, Z. D. Kvonba, N. N. Mikhailova, S. D. Ganichevc

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
b Novosibirsk State University, Novosibirsk, 630090 Russia
c University of Regensburg, Regensburg, 93040 Germany

Abstract: A two-dimensional semimetal is discovered in the (013) HgTe quantum well with a thickness of $d = 14$ nm, which is much smaller than those previously studied. It is found that such semimetal is characterized by the same band overlap as the wells with $d =18$$22$ nm having the same orientation, but here the impurity scattering of both electrons and holes is much more pronounced. The electron cyclotron photoresistance is measured as a function of the electron density ($N_s$) and it is shown that the amplitude of the electron cyclotron photoresistance decreases with decreasing density, and the electron cyclotron photoresistance is not detected at $N_s<5\times 10^9$ cm$^{-2}$. Thus, the two-dimensional semimetal under study does not exhibit the $N_s$-independent electron cyclotron photoresistance, which was earlier observed in the two-dimensional semimetal arising near the (100) surface. This is assumingly due to a significantly lower (by more than an order of magnitude) electron mobility in the system under study.

Received: 06.03.2021
Revised: 06.03.2021
Accepted: 07.03.2021

DOI: 10.31857/S1234567821070077


 English version:
Journal of Experimental and Theoretical Physics Letters, 2021, 113:7, 466–470

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