D. A. Zolotov, V. E. Asadchikov, A. V. Buzmakov, I. G. Dyachkova, E. V. Suvorov, “Unusual X-shaped defects in the silicon single crystal subjected to four-point bending”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2021, Volume 113, Issue 3,Pages <nobr>161

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CONDENSED MATTER

Unusual X-shaped defects in the silicon single crystal subjected to four-point bending

D. A. Zolotov^a, V. E. Asadchikov^a, A. V. Buzmakov^a, I. G. Dyachkova^a, E. V. Suvorov^b

^a Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences, Moscow, 119333 Russia
^b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432 Russia

Abstract: Dislocations in single-crystal silicon created by the four-point bending method are investigated using a laboratory X-ray source. Two- and three-dimensional diffraction images in the Laue geometry of unusual X-shaped dislocation structures have been obtained for the first time. The spatial arrangement of such linear defects is analyzed and their geometric characteristics are quantitatively determined.

Received: 30.11.2020
Revised: 14.12.2020
Accepted: 24.12.2020

DOI: 10.31857/S1234567821030046