E. I. Mareev, B. V. Rumiantsev, F. V. Potemkin, “Study of the parameters of laser-induced shock waves for laser shock peening of silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2020, Volume 112, Issue 11,Pages <nobr>780

This article is cited in 12 papers

MISCELLANEOUS

Study of the parameters of laser-induced shock waves for laser shock peening of silicon

E. I. Mareev^abc, B. V. Rumiantsev^ca, F. V. Potemkin^ac

^a International Laser Center, Moscow State University, Moscow, 119234 Russia
^b Institute of Photonic Technologies, Federal Scientific Research Centre Crystallography and Photonics, Russian Academy of Sciences, Troitsk, Moscow, 108840 Russia
^c Faculty of Physics, Moscow State University, Moscow, 119234 Russia

Abstract: The ranges of energies of femtosecond laser pulses and distances from the focusing point of intense (up to 10$^{13}$ W/cm$^2$) femtosecond laser radiation to a silicon sample in which phase transitions can be initiated have been determined using the time-resolved shadow photography technique. It has been found that the tight focusing ($NA = 0.5$) of femtosecond near infrared laser radiation provides a pressure of $15$ GPa, which corresponds to a pressure of ($40 \pm 6$) GPa in the case of laser shock peening of silicon and exceeds the threshold value necessary for the initiation of a family of phase transitions ($11$, $14$, and $33$ GPa). The pressure on the front of the shock wave propagating in the medium decreases rapidly (in $2.5$ ns) below this threshold value, which significantly restricts the possible application regimes of laser shock peening.

Received: 05.10.2020
Revised: 02.11.2020
Accepted: 03.11.2020

DOI: 10.31857/S1234567820230111