A. S. Yaroshevich, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov, “Microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2020, Volume 111, Issue 2,Pages <nobr>107

This article is cited in 7 papers

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Microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well

A. S. Yaroshevich^a, Z. D. Kvon^ab, G. M. Gusev^c, N. N. Mikhailov^ab

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
^b Novosibirsk State University, Novosibirsk, 630090 Russia
^c Instituto de Fisica da Universidade de São Paulo, 135960-170 São Paulo, SP, Brazil

Abstract: The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.

Received: 06.11.2019
Revised: 06.12.2019
Accepted: 06.12.2019

DOI: 10.31857/S0370274X20020101