I. G. Gorlova, A. V. Frolov, A. P. Orlov, V. Ya. Pokrovskii, Woei Wu Pai, “Field effect in the linear and nonlinear conductivity of the layered quasi-one-dimensional semiconductor TiS<nobr>$_3$</nobr>”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2019, Volume 110, Issue 6,Pages <nobr>400

This article is cited in 5 papers

CONDENSED MATTER

Field effect in the linear and nonlinear conductivity of the layered quasi-one-dimensional semiconductor TiS$_3$

I. G. Gorlova^a, A. V. Frolov^a, A. P. Orlov^a, V. Ya. Pokrovskii^a, Woei Wu Pai^b

^a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
^b Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan

Abstract: Field-effect transistor structures based on whiskers of layered quasi-one-dimensional semiconductor TiS$_3$ have been fabricated. The dependences of the conductivity $\sigma$ on the gate voltage $V_{\text{g}}$, as well as the current-voltage characteristics of whiskers (“source-drain”) at different $V_{\text{g}}$ values, have been measured in the temperature range of $4.2$–$300$ K. As the temperature decreases, the sensitivity of the conductivity to the gate voltage, $\alpha\equiv 1/\sigma\,\text{d}\sigma/\text{d}V_{\text{g}}$, increases in the range from $300$ to $80$ K and decreases sharply below $80$ K, where the nonlinear conductivity begins to depend on $V_{\text{g}}$. The results can be explained by the formation of an electronic crystal at low temperatures.

Received: 07.08.2019
Revised: 13.08.2019
Accepted: 13.08.2019

DOI: 10.1134/S0370274X19180097