T. V. Perevalov, V. A. Gritsenko, A. K. Gutakovskii, I. P. Prosvirin, “Structure of Hf$_{0.9}$La$_{0.1}$O$_2$ ferroelectric films obtained by the atomic layer deposition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2019, Volume 109, Issue 2,Pages 112

This article is cited in 5 papers

CONDENSED MATTER

Structure of Hf$_{0.9}$La$_{0.1}$O$_2$ ferroelectric films obtained by the atomic layer deposition

T. V. Perevalov^ab, V. A. Gritsenko^cab, A. K. Gutakovskii^a, I. P. Prosvirin^d

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
^b Novosibirsk State University, Novosibirsk, Russia
^c Novosibirsk State Technical University, Novosibirsk, Russia
^d Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

Abstract: Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group $Pmn2_1$. It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO$_2$ and La$_2$O$_3$ phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

Received: 21.11.2018
Revised: 21.11.2018
Accepted: 23.11.2018

DOI: 10.1134/S0370274X19020097