V. V. Bakin, S. N. Kosolobov, S. A. Rozhkov, H. E. Sheibler, A. S. Terekhov, “Atomic rearrangements and photoemission processes at a <nobr>$p$</nobr>-GaN(Cs)-vacuum interface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2018, Volume 108, Issue 3,Pages <nobr>180

This article is cited in 2 papers

OPTICS AND NUCLEAR PHYSICS

Atomic rearrangements and photoemission processes at a $p$-GaN(Cs)-vacuum interface

V. V. Bakin^a, S. N. Kosolobov^a, S. A. Rozhkov^ab, H. E. Sheibler^ab, A. S. Terekhov^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
^b Novosibirsk State University, Novosibirsk, Russia

Abstract: Spontaneous changes in photoemission properties of a $p$-GaN(Cs)-vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Cs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the $p$-GaN(Cs)-vacuum interface to its free energy and entropy.

Received: 20.04.2018
Revised: 04.07.2018

DOI: 10.1134/S0370274X18150067