Abstract:
The effect of Coulomb drag on a gas of dipole excitons in spatially separated two-dimensional quantum wells containing electron and exciton gases is studied theoretically. The Coulomb drag of excitons can be used to control exciton transport in transistor structures whose active element is a two-dimensional gas of dipole excitons. Expressions for the exciton cross conductivity as a function of temperature are obtained for the diffusion and ballistic transport regimes. For each regime, the limiting cases in terms of the ratio of the Coulomb interaction screening length to the distance between the gases are analyzed. It is shown that, at temperatures exceeding considerably the exciton-gas degeneracy temperature, the cross conductivity is independent of the temperature, while in the opposite case it vanishes exponentially.
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