R. K. Arslanov, T. R. Arslanov, I. V. Fedorchenko, L. Kilanski, T. Chatterji, “Structure-dependent magnetoresistance in the Zn$_{0.1}$Cd$_{0.9}$GeAs$_2$ + MnAs hybrid nanocomposite”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2018, Volume 107, Issue 10,Pages 643

This article is cited in 4 papers

CONDENSED MATTER

Structure-dependent magnetoresistance in the Zn$_{0.1}$Cd$_{0.9}$GeAs$_2$ + MnAs hybrid nanocomposite

R. K. Arslanov^a, T. R. Arslanov^a, I. V. Fedorchenko^b, L. Kilanski^c, T. Chatterji^d

^a Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala, Russia
^b Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
^c Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
^d Institute Laue-Langevin, Grenoble Cedex 9, France

Abstract: The effect of high pressure on electron transport and on the field dependence of the transverse magnetoresistance has been studied in a hybrid nanocomposite based on the Zn$_{0.1}$Cd$_{0.9}$GeAs$_2$ matrix and MnAs clusters. A record high negative magnetoresistance of $\sim74\%$ is formed near a pressure-induced structural transition ($P\approx 3.5$ GPa). The considered scattering mechanisms include both the contribution from MnAs clusters at relatively low pressures (up to $0.7$ GPa) and spin-dependent scattering by localized magnetic moments in the Mn-substituted structure of the matrix in the region of the structural transition. The presence of the positive magnetoresistance region associated with the two-band transport model in the high-pressure phase, as well as the large negative magnetoresistance, is described in the framework of the semiempirical Khosla–Fischer expression.

Received: 16.03.2018
Revised: 26.03.2018

DOI: 10.7868/S0370274X18100053