CONDENSED MATTER

Spin polarization of Mn$_5$Ge$_3$ in the bulk and thin films

N. A. Skorikov^a, V. I. Anisimov<sup>ab

a</sup> Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
^b Ural Federal University, Yekaterinburg, Russia

Abstract: The intermetallic compound Mn$_5$Ge$_3$ is one of the promising materials for application as a source of charge carriers in spintronics. The existing experimental data on the spin polarization in Mn$_5$Ge$_3$ demonstrate significant discrepancies. All theoretical studies concern a Mn$_5$Ge$_3$ bulk crystal. At the same time, thin films are of interest for applications. In this work, ab initio calculations have been performed for a Mn$_5$Ge$_3$ thin film on a germanium substrate. The difference between the magnetic moments of manganese atoms, densities of states, and spin polarizations for the bulk crystal and thin film has been demonstrated.

Received: 21.02.2018

DOI: 10.7868/S0370274X1807007X

 English version: Journal of Experimental and Theoretical Physics Letters, 2018, 107:7, 422–425

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