Abstract:
Charge photoaccumulation processes in TiO$_2$/MoO$_3$ nanoheterostructures have been studied with the use of point defects in the structure of samples as specific “markers”. It has been found that the relaxation time of photoexcited charge carriers increases sharply in TiO$_2$/MoO$_3$ heterostructures as compared to initial TiO$_2$ to about 4 h. A method based on electron paramagnetic resonance spectroscopy has also been proposed to determine the positions of energy levels of defects in the band gap of semiconductors composing a heterostructure. The results can be used to develop new-generation photocatalytic environment cleaning systems where the degradation of toxic impurities continues for a long time after the end of illumination.