This article is cited in 12 papers

CONDENSED MATTER

Change in the sign of the magnetoresistance and the two-dimensional conductivity of the layered quasi-one-dimensional semiconductor TiS$_3$

I. G. Gorlova^a, V. Ya. Pokrovskii^a, S. Yu. Gavrilkin^b, A. Yu. Tsvetkov<sup>b

a</sup> Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, 125009 Russia
^b Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991 Russia

Abstract: The dependences of the resistance of the layered quasi-one-dimensional semiconductor TiS$_3$ on the direction and magnitude of the magnetic field $\mathbf{B}$ have been measured. The anisotropy and angular dependences of the magnetoresistance indicate the two-dimensional character of the conductivity at $T < 100$ K. Below $T_0 \approx 50$ K, the magnetoresistance for the directions of the field in the plane of the layers (ab plane) increases sharply, whereas the transverse magnetoresistance ($\mathbf{B}\parallel c$) becomes negative. The results confirm the possibility of an electron phase transition to a collective state at $T_0$. The negative magnetoresistance (at $\mathbf{B}\parallel c$) below $T_0$ is explained by the magnetic-field-induced suppression of two-dimensional weak localization. The positive magnetoresistance (at $\mathbf{B}\parallel ab$) is explained by the effect of the magnetic field on the spectrum of electronic states.

Received: 24.11.2017
Revised: 05.12.2017

DOI: 10.7868/S0370274X18030074

 English version: Journal of Experimental and Theoretical Physics Letters, 2018, 107:3, 175–181

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