L. N. Oveshnikov, V. A. Prudkoglyad, Yu. G. Selivanov, E. G. Chizhevskii, B. A. Aronzon, “Quantum corrections to the conductivity and anisotropy of the magnetoresistance in Eu-doped Bi$_2$Se$_3$ thin films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2017, Volume 106, Issue 8,Pages 506

This article is cited in 6 papers

CONDENSED MATTER

Quantum corrections to the conductivity and anisotropy of the magnetoresistance in Eu-doped Bi$_2$Se$_3$ thin films

L. N. Oveshnikov^ab, V. A. Prudkoglyad^b, Yu. G. Selivanov^b, E. G. Chizhevskii^b, B. A. Aronzon^ab

^a National Research Center Kurchatov Institute, Moscow, Russia
^b Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia

Abstract: The magnetotransport in Bi$_2$Se$_3$ thin films with magnetic Eu dopants is studied within the range of low applied magnetic fields. With the increase in the doping level, the saturation of the dephasing length on cooling is observed. This can be related to the existence of magnetic inclusions. The observed anisotropy of the magnetoresistance is qualitatively similar to the anisotropy characteristic of nonmagnetic Bi$_2$Se$_3$ films. Numerous similarities to the properties of pure Bi$_2$Se$_3$ films and some observed differences can be interpreted under the assumption of the local interaction of topologically nontrivial interface states with Eu-rich inclusions.

Received: 21.09.2017

DOI: 10.7868/S0370274X17200097