N. P. Stepina, A. V. Nenashev, A. V. Dvurechenskii, “Hall effect in hopping conduction in an ensemble of quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2017, Volume 106, Issue 5,Pages <nobr>288

This article is cited in 2 papers

CONDENSED MATTER

Hall effect in hopping conduction in an ensemble of quantum dots

N. P. Stepina^a, A. V. Nenashev^ba, A. V. Dvurechenskii^ba

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
^b Novosibirsk State University, Novosibirsk, Russia

Abstract: The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at $4.2$ K varies in the range of $10^{-4}-10^{-12}\Omega^{-1}$, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.

Received: 14.07.2017
Revised: 25.07.2017

DOI: 10.7868/S0370274X17170052