Abstract:
The transport of traps in a dielectric after capture of holes in an electric field is considered with the inclusion of the two-band conduction. The distance covered by a trap with a trapped hole decreases exponentially with an increase in the electric field. A value of $3\times 10^{-15}\,$cm$^2/(\text{Vs})$ has been determined for the mobility of traps with trapped holes in Si$_3$N$_4$.
Fulltext:
PDF file (272 kB)