A. I. Yakimov, V. V. Kirienko, V. A. Armbrister, A. V. Dvurechenskii, “Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2017, Volume 105, Issue 7,Pages <nobr>419

This article is cited in 2 papers

CONDENSED MATTER

Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

A. I. Yakimov^ab, V. V. Kirienko^a, V. A. Armbrister^a, A. V. Dvurechenskii^ac

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
^b Tomsk State University, Tomsk, Russia
^c Novosibirsk State University, Novosibirsk, Russia

Abstract: It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to the multiple (to 20 times) enhancement of the hole photocurrent in narrow wavelength regions of the mid-infrared range. The results are explained by the light wave excitation of the surface plasmon–polaritons at the metal–semiconductor interface effectively interacting with intraband transitions of holes in quantum dots.

Received: 13.02.2017
Revised: 27.02.2017

DOI: 10.7868/S0370274X17070025