L. N. Oveshnikov, V. A. Prudkoglyad, E. I. Nekhaeva, A. Yu. Kuntsevich, Yu. G. Selivanov, E. G. Chizhevskii, B. A. Aronzon, “Magnetotransport in thin epitaxial Bi$_{2}$Se$_{3}$ films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2016, Volume 104, Issue 9,Pages 651

This article is cited in 10 papers

CONDENSED MATTER

Magnetotransport in thin epitaxial Bi$_{2}$Se$_{3}$ films

L. N. Oveshnikov^ab, V. A. Prudkoglyad^a, E. I. Nekhaeva^ab, A. Yu. Kuntsevich^ac, Yu. G. Selivanov^a, E. G. Chizhevskii^a, B. A. Aronzon^ab

^a Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
^b National Research Center Kurchatov Institute, Moscow, Russia
^c National Research University Higher School of Economics, Moscow, Russia

Abstract: The magnetoconductivity of thin Bi$_{2}$Se$_{3}$ films covered by a protective Se layer and grown at (111) BaF$_2$ substrates is studied. It is shown that the negative magnetoconductivity observed at low magnetic fields and caused by the effect of weak antilocalization, as well as the Shubnikov–de Haas oscillations at higher fields, is determined only by the magnetic field component perpendicular to the film plane. The obtained experimental results can be reasonably interpreted under the assumption that the studied films exhibit two-dimensional topologically protected electron states. Moreover, the contribution of these states to the total conductivity turns out to be the dominant one.

Received: 31.08.2016
Revised: 22.09.2016

DOI: 10.7868/S0370274X16210086