This article is cited in 6 papers

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Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)-vacuum interface

S. A. Rozhkov^ab, V. V. Bakin^b, D. V. Gorshkov^ab, S. N. Kosolobov^b, H. E. Sheibler^b, A. S. Terekhov<sup>b

a</sup> Novosibirsk State University, Novosibirsk, Russia
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

Abstract: It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN (Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons. In the quantum efficiency spectrum of the p-GaN (Cs,O) photocathode, an exciton peak has been identified, indicating a significant contribution of the electron-hole interaction to the generation of free electrons in heavily doped p-GaN.

Received: 24.05.2016

DOI: 10.7868/S0370274X16140125

 English version: Journal of Experimental and Theoretical Physics Letters, 2016, 104:2, 135–139

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