A. I. Gusev, “Effect of carbon vacancies on the electric resistivity of nonstoichiometric VC$_y$ vanadium carbide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2009, Volume 90, Issue 3,Pages <nobr>210

This article is cited in 5 papers

CONDENSED MATTER

Effect of carbon vacancies on the electric resistivity of nonstoichiometric VC$_y$ vanadium carbide

A. I. Gusev

Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences

Abstract: The influence of the temperature, concentration, and distribution of structure vacancies of the carbon sublattice on the electric resistivity ρ of nonstoichiometric VC_y vanadium carbide (0.66 ≤ y ≤ 0.875) has been studied in the temperature range of 300–1200 K. The symmetry and structure characteristics of the ordered V₆C₅ and V₈C₇ phases formed owing to low-temperature annealing on various sections of the homogeneity region of the VC_y carbide. The dependence of the residual electric resistivity on the content of the disordered vanadium carbide is explained by the atom-vacancy interaction and the change in the carrier concentration in the homogeneity region of VC_y.

PACS: 61.50.Ks, 61.66.Fn, 61.72.Ji, 72.15.Eb

Received: 25.06.2009