This article is cited in 3 papers

CONDENSED MATTER

Generation of THz radiation by AlGaAs nanowires

V. N. Trukhin^ab, A. S. Buyskih^a, A. D. Bouravlev^acd, I. A. Mustafin^ba, Yu. B. Samsonenko^c, A. V. Trukhin^da, G. E. Cirlin^acde, M. A. Kaliteevski^ca, D. A. Zeze^f, A. J. Gallant<sup>f

a</sup> Ioffe Physicotechnical Institute of the RAS, 194021 St.-Petersburg, Russia
^b St.-Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 St.-Petersburg, Russia
^c St.-Petersburg Academic University of the RAS, 194021 St.-Petersburg, Russia
^d St.-Petersburg State University, 199034 St.-Petersburg, Russia
^e St.-Peterburg Polytechnic University, 195251 St.-Peterburg, Russia
^f School Engineering and Computing Sciences, Durham University, South Road, DH1 3LE Durham, UK

Abstract: Terahertz (THz) emission by AlGaAs nanowires grown on a GaAs substrate under excitation by femtosecond optical pulses has been observed. It is demonstrated that THz emission occurs via excitation of photocurrent in the nanowires. The dynamics of photoinduced charge carriers is studied via the influence of an electron-hole plasma on THz radiation. It is shown that the capture of charge carriers on vacancies which exist at the boundaries of nanowires, on the interfaces between cubic and hexagonal phase in nanowires, leads to an increase in the efficiency of THz emission.

Received: 15.07.2015
Revised: 22.07.2015

Language: English

DOI: 10.7868/S0370274X15170129

 English version: Journal of Experimental and Theoretical Physics Letters, 2015, 102:5, 316–320

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