This article is cited in 5 papers

CONDENSED MATTER

Correlations of mutual positions of charge density waves nodes in side-by-side placed InAs wires measured with scanning gate microscopy

A. A. Zhukov^a, Ch. Volk^bc, A. Winden^cb, H. Hardtdegen^bc, Th. Schäpers<sup>bcd

a</sup> Institute of Solid State Physics of the RAS, 142432 Chernogolovka, Russia
^b Grünberg Institut (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
^c JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany
^d II. Physikalisches Institut, RWTH Aachen University, 52056 Aachen, Germany

Abstract: We investigate the correlations of mutual positions of charge density waves nodes in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and “crystal lattice mismatch” defect were observed. These observations demonstrate the crucial role of Coulomb interaction in formation of charge density waves in InAs nanowires.

Received: 31.03.2015

Language: English

DOI: 10.7868/S0370274X1509009X

 English version: Journal of Experimental and Theoretical Physics Letters, 2015, 101:9, 628–632

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