This article is cited in 4 papers

CONDENSED MATTER

Nonlocal and local mechanisms of cesium-induced chemisorption of oxygen on a $p$-GaAs(Cs,O) surface

V. V. Bakin, K. V. Toropetsky, H. E. Sheibler, A. S. Terekhov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia

Abstract: It has been established that the probability of Cs-induced chemisorption of molecular oxygen on a $p$-GaAs(Cs) surface is mainly determined by the probability of the dissociation of the molecule during its collision with the surface. With an increase in the amount of adsorbed oxygen on the $p$-GaAs(Cs,O) surface, the probability of its chemisorption decreases and, depending on the value of the cesium coating, can either be still determined by the probability of the dissociation of the molecule or be limited by the probability of the “capture” of oxygen atoms by the local chemisorption centers or depend on these two processes.

Received: 29.12.2014

DOI: 10.7868/S0370274X15060041

 English version: Journal of Experimental and Theoretical Physics Letters, 2015, 101:6, 380–384

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