V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, S. A. Denisov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. A. Matveev, S. M. Nekorkin, V. G. Shengurov, “Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 100, Issue 12,Pages <nobr>900

This article is cited in 4 papers

CONDENSED MATTER

Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate

V. Ya. Aleshkin^ab, N. V. Dikareva^c, A. A. Dubinov^ab, S. A. Denisov^ac, Z. F. Krasil'nik^ba, K. E. Kudryavtsev^ba, S. A. Matveev^c, S. M. Nekorkin^c, V. G. Shengurov^ac

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b N. I. Lobachevski State University of Nizhni Novgorod
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: High-perfection artificial Ge/Si substrates are created by hot-wire chemical-vapor deposition, and InGaAs/GaAs/AlGaAs quantum-well heterostructures are grown on these substrates by metalorganic chemical-vapor deposition. Photoluminescence spectra of these heterostructures are investigated. Stimulated emission in the near-infrared spectral range under optical pumping is observed. Threshold pump powers for the onset of stimulated emission are determined and the variation of the emission spectra with the optical-pump power is examined.

Received: 05.11.2014

DOI: 10.7868/S0370274X14240084