This article is cited in 18 papers

CONDENSED MATTER

Quantum hall effect in a system of gapless Dirac fermions in HgTe quantum wells

D. A. Kozlov^ab, Z. D. Kvon^ab, N. N. Mikhailov^b, S. A. Dvoretskii<sup>b

a</sup> Novosibirsk State University
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The specific features of the quantum Hall effect (QHE) in a system of gapless Dirac fermions in HgTe quantum wells have been studied. It has been established that the behavior of the QHE is asymmetric with respect to the Dirac point: at the lowest temperature ($0.2$ K), quantization of hole fermions occurs in weak magnetic fields down to $0.15$ T, whereas quantization of the electron part of the Dirac cone occurs only in fields of about $0.5$ T. Such an asymmetry is caused by the effect of sideband maxima in the valence band forming the heavy-hole valleys, which play the role of a reservoir and screen out the fluctuation potential. The analysis of the behavior of the dissipative component of the conductivity near the Dirac point has led to a conclusion on the existence of the zeroth Landau level at this point.

Received: 22.10.2014

DOI: 10.7868/S0370274X14230088

 English version: Journal of Experimental and Theoretical Physics Letters, 2014, 100:11, 724–730

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