L. N. Oveshnikov, V. A. Kul'bachinskii, A. B. Davydov, B. A. Aronzon, “Anomalous hall effect in a 2D heterostructure including a GaAs/InGaAs/GaAs quantum well with a remote Mn <nobr>$\delta$</nobr>-layer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 100, Issue 9,Pages <nobr>648

This article is cited in 8 papers

CONDENSED MATTER

Anomalous hall effect in a 2D heterostructure including a GaAs/InGaAs/GaAs quantum well with a remote Mn $\delta$-layer

L. N. Oveshnikov^a, V. A. Kul'bachinskii^ba, A. B. Davydov^c, B. A. Aronzon^ac

^a National Research Centre "Kurchatov Institute"
^b M. V. Lomonosov Moscow State University, Faculty of Physics
^c P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: For heterostructures with a GaAs/InGaAs/GaAs quantum well and a magnetic (Mn) $\delta$-layer spatially separated from it (remote Mn д-layer), the magnetic field and temperature dependences of the anomalous component of the Hall resistivity have been analyzed. The comparison with the temperature dependence of the longitudinal electrical resistance reveals three temperature ranges where three different mechanisms of the anomalous Hall effect are manifested. The reported results can be treated as experimental evidence of the essential role of the intrinsic mechanism of the anomalous Hall effect in a two-dimensional system.

Received: 15.09.2014

DOI: 10.7868/S0370274X14210073