This article is cited in 26 papers

CONDENSED MATTER

Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots

A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: It is shown experimentally that the excitation of interband optical transitions in arrays of Ge/$n$-Si(001) quantum dots leads to a decrease in the concentration of electrons in the conduction band. The phenomenon observed is due to the formation of negatively charged exciton complexes in Ge islands and represents the first experimental confirmation of the spatial separation of electrons in the silicon matrix surrounding the islands.

PACS: 73.20.Mf, 73.50.Pz

Received: 10.04.2001

 English version: Journal of Experimental and Theoretical Physics Letters, 2001, 73:10, 529–531

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