This article is cited in 10 papers

CONDENSED MATTER

Thermoelectric and galvanomagnetic properties of chalcogens (Te, Se) at high pressures up to $30$ GPa

V. V. Shchennikov, S. V. Ovsyannikov

Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg

Abstract: The longitudinal and transverse Nernst–Ettingshausen effects have been measured at high pressures up to $30$ GPa. The results of studying Te and Se in the region of metal-semiconductor phase transformations are presented as a demonstration of the possibilities of the given technique. In agreement with magnetoresistance data, it was found that the hole mobility grows with increasing pressure as a result of a decrease in the band gap width. Mechanisms of hole scattering at high pressures were determined.

PACS: 62.50.+p, 72.15.Gd, 72.20.Nz

Received: 19.09.2001
Revised: 15.10.2001

 English version: Journal of Experimental and Theoretical Physics Letters, 2001, 74:10, 486–490

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