This article is cited in 8 papers

CONDENSED MATTER

Experimental discovery of the anisotropy of phonon-plasmon modes in GaAs/AlAs(100) superlattices

V. A. Volodin<sup>ab

a</sup> Novosibirsk State University
^b Institute of Semiconductor Physics of SB RAS

Abstract: Doped (n-type) GaAs/AlAs superlattices with thicknesses of the GaAs and AlAs layers from 1.7 to 6.8 Å and 13.6 Å, respectively, have been studied by means of Raman spectroscopy. The use of a microattachment for Raman backscattering studies has allowed for the observation of the modes with the wave vector directed both across and along the superlattice layers (in the scattering from the side face of the superlattice). The theoretically predicted anisotropy of mixed phonon-plasmon modes caused by the anisotropy of the electron effective mass in the type II superlattices has been experimentally discovered.

PACS: 63.20.Ls

Received: 18.03.2009

 English version: Journal of Experimental and Theoretical Physics Letters, 2009, 89:8, 419–421

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