This article is cited in 29 papers

CONDENSED MATTER

Conductance anisotropy and the power-law current-voltage characteristics along and across the layers of the TiS3 quasi-one-dimensional layered semiconductor

I. G. Gorlova, S. G. Zybtsev, V. Ya. Pokrovskii

Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow

Abstract: Nonlinear conductance along the crystallographic axis c across the layered whiskers of the TiS3 quasi-one-dimensional semiconductor has been discovered. It has been shown that the current-voltage characteristics in all three directions along the $a$, $b$, and $c$ axes obey a power law with the exponent increasing with a decrease in temperature. Possible mechanisms of the nonlinear conductance including the motion of condensed electrons, excitation and dissociation of electron-hole pairs in two-dimensional layers, and interlayer tunneling under the conditions of the Coulomb blockade with a charge spreading over the layers are considered.

Received: 07.07.2014
Revised: 23.07.2014

DOI: 10.7868/S0370274X14160085

 English version: Journal of Experimental and Theoretical Physics Letters, 2014, 100:4, 256–261

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