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JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2009 Volume 89, Issue 7, Pages 396–401 (Mi jetpl397)

This article is cited in 6 papers

CONDENSED MATTER

Nondiffusion atomic ordering in the low-temperature deposition of copper

I. G. Marchenkoa, I. I. Marchenkob

a National Science Centre Kharkov Institute of Physics and Technology
b Khar'kov Polytechnical University

Abstract: A new mechanism of atomic ordering in the low-temperature homoepitaxial deposition of copper onto a close-packed (111) plane has been discovered by means of molecular-dynamics simulation. This nondiffusion mechanism is caused by the collective motion of clusters along the dislocation lines of partial Shockley dislocations. We predict the existence of dislocation-induced coalescence, which is an increase in the mean size of face-centered cubic (fcc) clusters owing to a decrease in the number of hexagonal close-packed (hcp) clusters due to the motion of surface dislocations.

PACS: 07.05.Tp, 68.55.-a, 68.55.A

Received: 04.02.2009
Revised: 26.02.2009


 English version:
Journal of Experimental and Theoretical Physics Letters, 2009, 89:7, 337–341

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