This article is cited in 3 papers

CONDENSED MATTER

New Ga-enriched reconstructions on the GaAs(001) surface

O. E. Tereshchenko^ab, K. V. Toropetskiy^ba, S. V. Eremeev^cd, S. E. Kul'kova<sup>cd

a</sup> Institute of Semiconductor Physics of SB RAS
^b Novosibirsk State University
^c Tomsk State University
^d Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences

Abstract: To prepare structure-ordered GaAs(001) surfaces at low temperatures, GaAs(001) surfaces coated with native oxides were exposed in an atomic hydrogen flow in the temperature range 280–450 °C. The new Ga-enriched GaAs(001) surfaces with the (4 × 4) and (2 × 4)/c(2 × 8) reconstructions were prepared and studied by the methods of X-ray photoelectron spectroscopy, low-energy electron diffraction, and high-resolution characteristic electron energy loss spectroscopy. For the GaAs(001)-(2 × 4) surface, the structure of the Ga-stabilized surface has been proposed and ab initio computed within the (2 × 4) Ga-trimer unit cell model.

PACS: 61.05.Jh, 67.63.Gh, 68.47.Fg, 81.05.Ea

Received: 25.12.2008

 English version: Journal of Experimental and Theoretical Physics Letters, 2009, 89:4, 185–190

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