D. S. Abramkin, V. T. Shamirzaev, M. A. Putyato, A. K. Gutakovskii, T. S. Shamirzaev, “Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP heterostructures with pseudomorphic self-assembled quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2014, Volume 99, Issue 2,Pages <nobr>81

This article is cited in 11 papers

CONDENSED MATTER

Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP heterostructures with pseudomorphic self-assembled quantum dots

D. S. Abramkin^a, V. T. Shamirzaev^b, M. A. Putyato^a, A. K. Gutakovskii^a, T. S. Shamirzaev^ac

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State Technical University
^c Novosibirsk State University

Abstract: Band alignment of heterostructures with pseudomorphic GaSb$_{1-x}$P$_{x}$/GaP self-assembled quantum dots (SAQDs) lying on wetting layer was studied. Coexistence of type-I and type-II band alignment was found within the same heterostructure. Wetting layer has band alignment of type-I with the lowest electronic state belonging to the X$_{XY}$ valley of GaSb$_{1-x}$P$_{x}$ conduction band, in contrast to SAQDs, which have band alignment of type-II, independently of the ternary alloy composition $x$. It is shown that type-I – type-II transition is a result of GaP matrix deformation around the SAQD.

Received: 08.11.2013

Language: English

DOI: 10.7868/S0370274X14020040