This article is cited in 18 papers

Photoluminescence of GeO$_2$ films containing germanium nanocrystals

V. A. Volodin^a, Y. B. Gorokhov^a, M. D. Efremov^a, D. V. Marin^a, D. A. Orekhov<sup>b

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: Germanium nanocrystals were formed in a GeO$_2$ film during the process of germanium monoxide gas-phase deposition onto a sapphire substrate and studied by photoluminescence (PL) and Raman scattering spectroscopy. A PL peak in this heterosystem was observed in the visible region at room temperature. The sizes of Ge nanocrystals were estimated from the position of a Raman peak corresponding to scattering by localized optical phonons in germanium. The PL peak position calculated with allowance for the electron and hole size quantization in Ge nanocrystals coincides well with the experimentally observed position of this peak.

PACS: 63.22.+m, 78.40.Fy, 78.55.-m, 81.15.-z

Received: 04.03.2003

 English version: Journal of Experimental and Theoretical Physics Letters, 2003, 77:8, 411–414

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