This article is cited in 3 papers

CONDENSED MATTER

Formation of the GaAs-Ge heterointerface in the presence of oxide

S. P. Suprun, E. V. Fedosenko

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS

Abstract: The data of the X-ray photoelectron spectroscopy and reflection high-energy electron diffraction studies of the formation of the GaAs-Ge heterointerface under incomplete removal of all oxide phases from the GaAs substrate surface are presented. It is shown that the combination of the processes of final Ga₂O desorption and Ge deposition allows one to avoid the evaporation of As and the stoichiometry distortion near the interface.

PACS: 73.20.-r, 73.40.Lq, 81.15.Hi

Received: 09.12.2008

 English version: Journal of Experimental and Theoretical Physics Letters, 2009, 89:2, 84–87

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