P. G. Sennikov, S. V. Golubev, V. I. Shashkin, D. A. Pryakhin, M. N. Drozdov, B. A. Andreev, Yu. N. Drozdov, A. S. Kuznetsov, H. Pol, “Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2009, Volume 89, Issue 2,Pages <nobr>80

This article is cited in 4 papers

CONDENSED MATTER

Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride

P. G. Sennikov^a, S. V. Golubev^a, V. I. Shashkin^b, D. A. Pryakhin^b, M. N. Drozdov^b, B. A. Andreev^b, Yu. N. Drozdov^b, A. S. Kuznetsov, H. Pol^c

^a Institute of Applied Physics, Russian Academy of Sciences
^b Institute for Physics of Microstructures, Russian Academy of Sciences
^c VITCON Projeсtconsult GmbH, D-07743 Jena, Germany

Abstract: The production of silicon layers using plasma enhanced chemical vapor deposition in the mixture of silicon tetrafluoride and hydrogen is reported. The samples have been analyzed by X-ray diffraction, Raman spectroscopy, and secondary ion mass spectrometry. The phase composition of the layers is nanocrystalline silicon with the crystalline-domain sizes from 3 to 9 nm in dependence of the conditions of the process. The samples are characterized by intense photoluminescence at room temperature.

PACS: 52.77.Dq, 61.46.Hk, 73.63.Bd, 81.07.Bc

Received: 02.12.2008