S. V. Savinov, A. I. Oreshkin, S. I. Oreshkin, “Ab initio study of surface electronic structure of phosphorus donor imputiry on Ge(111)-(2<nobr>$\times$</nobr>1) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2013, Volume 97, Issue 7,Pages <nobr>458

CONDENSED MATTER

Ab initio study of surface electronic structure of phosphorus donor imputiry on Ge(111)-(2$\times$1) surface

S. V. Savinov^a, A. I. Oreshkin^a, S. I. Oreshkin^b

^a M. V. Lomonosov Moscow State University, Faculty of Physics
^b P. K. Sternberg Astronomical Institute, M. V. Lomonosov Moscow State University

Abstract: We present the results of numerical modeling of Ge(111)-(2$\times$1) surface electronic properties in vicinity of P donor impurity atom near the surface. We show, that despite of well established bulk donor impurity energy level position at the very bottom of conduction band, surface donor impurity might produce energy level below Fermi energy, depending on impurity atom local environment. It was demonstrated, that impurity, located in subsurface atomic layers, is visible in STM experiment. The quasi-1D character of impurity image, observed in STM experiments, is confirmed by our computer simulations.

Received: 28.01.2013

Language: English

DOI: 10.7868/S0370274X13070047