This article is cited in 12 papers

CONDENSED MATTER

Fine structure of the exciton states in InAs quantum dots

A. V. Gaisler^a, A. S. Yaroshevich^a, I. A. Derebezov^a, A. K. Kalagin^a, A. K. Bakarov^a, A. I. Toropov^a, D. V. Shcheglov^ab, V. A. Gaisler^ac, A. V. Latyshev^ab, A. L. Aseev<sup>a

a</sup> A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
^b Novosibirsk State University
^c Novosibirsk State Technical University

Abstract: The fine structure of the exciton states in InAs quantum dots grown by the Stranski–Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has been demonstrated that, with increasing quantum-dot size, the splitting of the exciton states increases steadily to $\sim10^{2}\,\mu$eV. It has been shown that, in the exciton energy range of $1.3$–$1.4$ eV, the magnitude of this splitting is comparable to the natural width of the exciton lines. This result is important for the development of entangled photon pair emitters based on InAs quantum dots.

Received: 05.02.2013

DOI: 10.7868/S0370274X1305007X

 English version: Journal of Experimental and Theoretical Physics Letters, 2013, 97:5, 274–278

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