Abstract:
The possibility of the creation a green-wavelength laser has been theoretically examined. The gain and threshold current density in the laser based on a (Al$_{0.5}$Ga$_{0.5}$)$_{0.49}$In$_{0.51}$P/(Al$_{0.6}$Ga$_{0.4}$)$_{0.49}$In$_{0.51}$P double hetero-structure have been calculated. It has been shown that, at a sufficiently high doping of an active region with an n-type impurity, the minimum threshold current density is reached when the coefficient of the eeh process of Auger recombination is larger than the coefficient of the ehh process.
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