V. N. Men'shov, V. V. Tugushev, E. V. Chulkov, “Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2012, Volume 96, Issue 7,Pages <nobr>492

This article is cited in 11 papers

CONDENSED MATTER

Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator

V. N. Men'shov^ab, V. V. Tugushev^ba, E. V. Chulkov^c

^a Russian Research Centre "Kurchatov Institute", Moscow
^b Tomsk State University
^c Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country

Abstract: We report on theoretical study of the bound electron states induced by a ferromagnetic delta-layer embedded into a narrow-band-gap semiconductor of the Bi$_2$Se$_3$-type which is a three-dimensional topological insulator with large spin-orbit coupling. We make use of an effective Hamiltonian taking into account the inverted band structure of the semiconductor host at the $\Gamma $ point and describe the properties of the in-gap bound states: energy spectrum, characteristic length and spin polarization. We highlight a role of these states for a magnetic proximity effect in digital magnetic heterostructures based on the Bi$_2$Se$_3$-type semiconductors.

Received: 17.08.2012

Language: English