E. B. Olshanetskii, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov, S. A. Dvoretskii, “Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2012, Volume 96, Issue 4,Pages <nobr>268

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Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field

E. B. Olshanetskii^a, Z. D. Kvon^ba, G. M. Gusev^c, N. N. Mikhailov^a, S. A. Dvoretskii^a

^a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
^b Novosibirsk State University
^c Universidade de São Paulo, Instituto de Física Teórica

Abstract: A metal-insulator transition in a two-dimensional semimetal based on HgTe quantum wells is discovered. The transition is induced by a magnetic field applied parallel to the plane of the quantum well. The threshold behavior of the activation energy as a function of the magnetic-field strength and an abrupt reduction of the Hall resistance at the onset of the transition suggest that the observed effect originates from the formation of an excitonic insulator.

Received: 05.06.2012
Revised: 09.07.2012