This article is cited in 9 papers

CONDENSED MATTER

Phase transformations in the Mn-Ge system and in Ge$_x$Mn$_{1-x}$ diluted semiconductors

V. G. Myagkov^ab, V. S. Zhigalov^ab, A. A. Matsynin^ab, L. E. Bykova^a, G. V. Bondarenko^a, G. N. Bondarenko^c, G. S. Patrin^de, D. A. Velikanov<sup>ae

a</sup> L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences
^b M. F. Reshetnev Siberian State Aerospace University
^c Institute of Chemistry and Chemical Technology SB RAS, Krasnoyarsk
^d Kirensky Institute of Physics, Siberian Branch of USSR Academy of Sciences
^e Siberian Federal University, Krasnoyarsk

Abstract: Results of an X-ray diffraction study as well as magnetic and electrical measurements of the solid-state reactions in Ge/Mn polycrystalline films of an 80/20 atomic composition have been presented. It has been shown that the ferromagnetic Mn$_5$Ge$_3$ phase is formed first on the Ge/Mn interface after annealing at $\sim 120\,^\circ$C. The further increase in the annealing temperature to $300\,^\circ$C leads to the beginning of the synthesis of the Mn$_{11}$Ge$_8$ phase, which becomes dominating at $400\,^\circ$C. The existence of new structural transitions in the Mn-Ge system in the region of $\sim\,120$ and $\sim\,300\,^\circ$C has been predicted on the basis of the presented results and results obtained earlier when studying solid-state reactions in different film structures. The supposition about the general chemical mechanisms of the synthesis of the Mn$_5$Ge$_3$ and Mn$_{11}$Ge$_8$ phases during the solid-state reactions in the Ge/Mn films of the 80/20 atomic composition and the phase separation in Ge$_x$Mn$_{1-x}$ ($x > 0.95$) diluted semiconductors has been substantiated.

Received: 28.04.2012

 English version: Journal of Experimental and Theoretical Physics Letters, 2012, 96:1, 40–43

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